AOD414 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AOD414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD414 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 5.2mΩ (V_GS = 10V)
R_DS(ON) < 7.0mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
66
200
30
140
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
40
20
50
Maximum Junction-to-Case ^C
Steady-State
R_θJC
0.56
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com