AOD413Y Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD413Y
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD413Y uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard product
AOD413Y is Pb free, inside and out. It uses Pb-free
die attach and plating material(meets ROHS & Sony
259 specifications). AOD413YL is a Green Product
ordering option. AOD413Y and AOD413YL are
electrically identical.
Features
V_DS (V) = -40V
I_D = -12A (V_GS = -10V)
R_DS(ON) < 45mΩ (V_GS = -10V)
R_DS(ON) < 69mΩ (V_GS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^G
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-40
±20
-12
-12
-30
-12
30
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^C
Steady-State
R_θJL
2.5
3
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W