AOD413A Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD413A
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD413A uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = -40V
I_D = -12A
(V_GS = -10V)
R_DS(ON) < 44mΩ (V_GS = -10V)
R_DS(ON) < 66mΩ (V_GS = -4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View ^{D-PAK Bottom View}
D
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^B,H
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-40
±20
-12
-9
-30
-20
20
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Junction-to-Ambient ^A,G
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
16.7
40
Max
25
50
Maximum Junction-to-Case ^F
Steady-State
R_θJC
2
3
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com