AOD4136 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel SDMOSTM POWER Transistor

AOD4136
N-Channel SDMOS^TM POWER Transistor
General Description
Features
The AOD4136 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for both DC-DC and load
switch applications.
-RoHS Compliant
-Halogen Free*
Top View
D
TO-252
D-PAK _{Bottom View}
V_DS (V) = 25V
I_D = 25A
(V_GS = 10V)
R_DS(ON) < 11mΩ (V_GS = 10V)
R_DS(ON) <19mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
D
G
S
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current ^B,H
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy L=0.1mH ^C
Power Dissipation ^B
T_C=25°C
T_C=100°C
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
P_DSM
T_J, T_STG
25
±20
25
20
100
17
15
30
15
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Junction-to-Ambient ^A,G
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
17.4
50
Max
25
60
Maximum Junction-to-Case ^F
Steady-State
R_θJC
4
5
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com