AOD4128 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4128
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4128 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and low gate resistance.
This device is ideally suited for use as a low side switch in
CPU core power conversion. The device can also be used
in PWM, load switching and general purpose applications.
Standard Product AOD412 8 is Pb-free (meets ROHS &
Sony 259 specifications).
Features
V_DS (V) = 25V
I_D = 60 A
(V_GS = 10V)
R_DS(ON) < 4 mΩ (V_GS = 10V)
R_DS(ON) < 7 mΩ (V_GS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
25
±20
60
60
165
45
304
75
37
2.0
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady State
R_θJA
18
50
25
60
Maximum Junction-to-Case ^B
Steady State R_θJC
1
2
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com