AOD4126 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOD4126/AOI4126
100V N-Channel MOSFET
SDMOS ^TM
General Description
Product Summary
The AOD4126&AOI4126 are fabricated with SDMOS^TM
trench technology that combines excellent R_DS(ON) with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
100V
43A
< 24mΩ
< 30mΩ
Top View
D
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
S
G
G
S
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current ^A
Avalanche Current ^C
T_A=25°C
T_A=70°C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±25
43
30
100
7.5
6
28
39
100
50
3
1.9
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
8
35
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
10
42
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1 : May 2012
www.aosmd.com
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