AOD4112 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4112
N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
SRFETTM The AOD4112 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent R _DS(ON),and low gate charge.
This device is suitable for use as a low side FET in
SMPS, load switching and general purpose
applications. Standard Product AOD4112 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 20A (V_GS = 10V)
R_DS(ON) < 9.5mΩ (V_GS = 10V)
R_DS(ON) < 14.5mΩ (V_GS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested!
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
Soft Recovery MOSFET:
Integrated Schottky Diode
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^GF
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
20
20
80
25
94
50
25
5.7
3.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
18
44
Steady-State
R_θJC
2.4
Max
22
55
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com