AOD4106 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4106
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4106 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge.This device is
suitable for use as a low side switch in SMPS and
general purpose applications. Standard Product
AOD4106 is Pb-free (meets ROHS & Sony 259
specifications). AOD4106L is a Green Product ordering
option. AOD4106 and AOD4106L are electrically
identical.
V_DS (V) = 25V
I_D = 50A (V_GS = 20V)
R_DS(ON) < 5mΩ (V_GS = 20V)
R_DS(ON) < 6.5mΩ (V_GS = 12V)
R_DS(ON) < 8.1mΩ (V_GS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
Top View
Drain Connected to
Tab
D
G
GD S
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
25
±30
50
50
180
30
135
75
38
6.25
4
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A,D
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Steady-State
R_θJA
15
41
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1.5
Max
20
50
2.0
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.