AOD4104 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4104
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4104 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
V_DS (V) = 25V
I_D = 75A (V_GS = 10V)
R_DS(ON) < 3.6mΩ (V_GS = 20V)
R_DS(ON) < 4.5mΩ (V_GS = 12V)
R_DS(ON) < 5.4mΩ (V_GS = 10V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View
D-PAK
Bottom View
D
D
G
S
G
G
S
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G,I
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Maximum Junction-to-Case ^B
Steady-State
Symbol
R_θJA
R_θJC
Maximum
25
±30
75
75
200
30
135
100
50
2.5
1.6
-55 to 175
Typ
16
40
1
S
Max
20
50
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com