AOD4102 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4102
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4102 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard product AOD4102 is Pb-free (meets ROHS
& Sony 259 specifications).
V_DS (V) =30V
I_D = 12 A (VGS = 10V)
R_DS(ON) < 37 mΩ (V_GS = 10V)
R_DS(ON) < 64 mΩ (V_GS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G DS
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
12
12
30
9
12
21
10
4.2
2.7
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
20
50
30
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
4.5
7
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.