AOD4100 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD4100
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4100 uses advanced trench technology to
provide excellent R_DS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a High side switch in CPU core
power conversion.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 25V
I_D = 50A (V_GS = 10V)
R_DS(ON) < 6.5mΩ (V_GS = 20V)
R_DS(ON) < 9mΩ (V_GS = 12V)
R_DS(ON) < 12mΩ (V_GS = 10V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View
D-PAK
Bottom View
D
D
G
G
S
S
G
Absolute Maximum Ratings T _A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.3mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Maximum Junction-to-Case ^D
Steady-State
R_θJC
Maximum
25
±30
50
49
120
28
118
50
25
6.5
4.2
-55 to 175
Typ
16
43
2
S
Max
19
52
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com