AOD410 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AOD410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD410 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 30V
I_D = 8A (V_GS = 10V)
R_DS(ON) < 65mΩ (V_GS = 10V)
R_DS(ON) < 105mΩ (V_GS = 4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
Top View
D
D-PAK _{Bottom View}
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^B
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
8
6
20
8
10
25
12.5
2.1
1.33
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
20
46
Steady-State
R_θJL
5.3
Max
30
60
7
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com