AOD406_08 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOD406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD406 uses advanced trench technology to provide
excellent R_DS(ON), shoot-through immunity and body diode
characteristics. This device is ideally suited for use as a low
side switch in CPU core power conversion.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 5.0mΩ (V_GS = 10V)
R_DS(ON) < 5.7mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
TO-252
Top View
D
D-PAK
Bottom View
D
G
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C ^G
Current ^B,G
T_C=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
85
75
200
30
140
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
14.2
40
20
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
0.56
1.5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com