AOD403 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOD403/AOI403
30V P-Channel MOSFET
General Description
Product Summary
The AOD403/AOI403 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
V_DS
I_D (at V_GS= -20V)
R_DS(ON) (at V_GS= -20V)
R_DS(ON) (at V_GS = -10V)
100% UIS Tested
100% R_g Tested
-30V
-70A
< 6.2mΩ
< 8mΩ
(< 6.7mΩ^∗)
(< 8.5mΩ^∗)
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-70
-55
-200
-15
-12
-50
125
90
45
2.5
1.6
-55 to 175
G
G
D
S
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
41
Maximum Junction-to-Case
Steady-State
R_θJC
0.9
Max
20
50
1.6
* package TO251A
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.9.0: July 2013
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