AOD3N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V,2.5A N-Channel MOSFET

AOD3N60/AOU3N60
600V,2.5A N-Channel MOSFET
General Description
Product Summary
The AOD3N60 & AOU3N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
700V@150℃
2.5A
< 3.5Ω
TO252
TO251
DPAK
D
Top View
Bottom View
Top View
Bottom View
D
D
S
G
G
S
G
AOD3N60
S
D
G
S ^DG
S
AOU3N60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain ^TC^=25°C
Current^B
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
600
±30
2.5
1.6
8
2
60
120
5
56.8
0.45
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
1.8
Maximum
55
0.5
2.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 6: Jul 2011
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