AOD3N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 3A, 500V N-Channel MOSFET

AOD3N50
3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
V_DS (V) = 600V @ 150°C
I_D = 2.8A
R_DS(ON) < 3Ω (V_GS = 10V)
100% UIS Tested!
100% R _g Tested!
TO-252
D-PAK
D
Top View Bottom View
D
G
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximium
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain T_C=25°C
2.8
Current ^B
T_C=100°C
I_D
1.8
Pulsed Drain Current ^C
I_DM
9.0
Avalanche Current ^C
I_AR
2.0
Repetitive avalanche energy ^C
E_AR
60
Single pulsed avalanche energy ^H
E_AS
120
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
57
0.45
Junction and Storage Temperature Range T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient ^A,G
R_θJA
45
55
Maximum Case-to-Sink ^A
Maximum Junction-to-Case ^D,F
R_θCS
-
0.5
R_θJC
1.8
2.2
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com