AOD2N60A Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V,2A N-Channel MOSFET

AOD2N60A/AOI2N60A
600V,2A N-Channel MOSFET
General Description
Product Summary
The AOD2N60A & AOI2N60A have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS @ Tj,max
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
700V
2A
< 4.7Ω
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
AOD2N60A
G
S
S
D
G
G
G
D
S
AOI2N60A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain ^TC^=25°C
Current^B
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C,I
Repetitive avalanche energy ^C,I
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
2
1.4
6
4.6
10.6
97
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
57
0.45
Junction and Storage Temperature Range
T_J, T_STG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
40
-
1.8
Maximum
50
0.5
2.2
D
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.1.0 September 2013
www.aosmd.com
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