AOD2810 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET

AOD2810
80V N-Channel MOSFET
General Description
Product Summary
The AOD2810 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R_DS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
80V
46A
< 8.5mΩ
< 12mΩ
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
G
S
Maximum
80
±20
46
36
160
10.5
8.5
35
61
100
50
2.5
1.6
-55 to 175
Typ
Max
16
20
41
50
1.15
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Dec. 2012
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