AOD2606 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AOD2606
60V N-Channel MOSFET
General Description
Product Summary
The AOD2606 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R_DS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
60V
46A
< 6.8mΩ
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
60
±20
46
36
184
14
11
60
180
150
75
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
41
Maximum Junction-to-Case
Steady-State
R_θJC
0.8
Max
20
50
1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: July 2012
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