AOD254 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 150V N-Channel MOSFET

AOD254
150V N-Channel MOSFET
General Description
The AOD254 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R_DS(ON) and Crss.In addition,switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
100% UIS Tested
100% R_g Tested
150V
28A
< 46mΩ
< 53mΩ
TO252
DPAK
D
Top View
Bottom View
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
150
±20
28
20
45
4.5
3.6
12
7
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
15
41
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
20
50
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2011
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