AOD1N60_11 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V,1.3A N-Channel MOSFET

AOD1N60/AOU1N60/AOI1N60
600V,1.3A N-Channel MOSFET
General Description
Product Summary
The AOD1N60 & AOU1N60 & AOI1N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low R_DS(on), C_iss and C_rss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
700V@150℃
1.3A
< 9Ω
TO252
DPAK
TO251A
IPAK
TO251
D
Top View
Bottom View
Top View
Bottom View
Top View
Bottom View
D
D
S
G
AOD1N60
G
S
S
D
G
AOI1N60
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current^B
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
DS
G
AOU1N60
Maximum
600
±30
1.3
0.8
4
1
15
30
5
45
0.36
-50 to 150
300
G
S ^DG
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
2.3
Maximum
55
0.5
2.8
Units
°C/W
°C/W
°C/W
Rev 5: Aug 2011
www.aosmd.com
Page 1 of 6