 English |
|
|
|
|
|
|
|
| AOC2800 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |||
| |||
|
AOC2800
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Product Summary
The AOC2800 uses advanced trench technology to provide
excellent RSS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
It is ESD protected. This device is suitable for use as a uni-
directional or bi-directional load switch, facilitated by its
common-drain configuration.
Vss
ID (at VGS=4.5V)
RSS(ON) (at VGS=4.5V)
RSS(ON) (at VGS=4.0V)
RSS(ON) (at VGS=3.1V)
RSS(ON) (at VGS=2.5V)
30V
6A
< 42mâ¦
< 44mâ¦
< 49mâ¦
< 61mâ¦
WLCSP 1.57x1.57_4
Bottom View
G2
S2
G1
S1
Top View
Pin1(S1)
Equivalent Circuit
D1
D2
G1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Source-Source Voltage
VSS
Gate-Source Voltage
Source Current (DC) Note1
Source Current (Pulse) Note2
TA=25°C
VGS
IS
ISM
Power Dissipation Note1 TA=25°C
Junction and Storage Temperature Range
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
PD
TJ, TSTG
S1
Maximum
30
±12
6
60
1.3
-55 to 150
S2
Units
V
V
A
W
°C
Rev 4: Nov. 2012
www.aosmd.com
Page 1 of 5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese