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| AOC2422 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 8V N-Channel MOSFET | |||
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AOC2422
8V N-Channel MOSFET
General Description
The AOC2422 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.2V while retaining a 5V
VGS(MAX) rating.
Product Summary
VDS
ID (at VGS=2.5V)
RDS(ON) (at VGS=2.5V)
RDS(ON) (at VGS=1.8V)
RDS(ON) (at VGS=1.5V)
RDS(ON) (at VGS=1.2V)
Typical ESD protection
8V
3.5A
< 33mâ¦
< 38mâ¦
< 43mâ¦
< 58mâ¦
HBM Class 2
MCSP 0.97x0.97A_4
Top View
Bottom View
Top View
Bottom View
3
2
S
S
G
Pin1(G)
D
4
G
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Source Current (DC) Note1
Source Current (Pulse) Note2
Power Dissipation Note1
VGS
TA=25°C ID
IDM
TA=25°C PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
8
±5
3.5
35
0.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ⤠10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
110
160
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Max
140
200
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 5
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