AOC2413 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 8V P-Channel MOSFET

AOC2413
8V P-Channel MOSFET
General Description
The AOC2413 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.2V while retaining a 5V
V_GS(MAX) rating.
Product Summary
V_DS
I_D (at V_GS=-2.5V)
R_DS(ON) (at V_GS=-2.5V)
R_DS(ON) (at V_GS=-1.8V)
R_DS(ON) (at V_GS=-1.5V)
R_DS(ON) (at V_GS=-1.2V)
Typical ESD protection
-8V
-3.5A
< 28mΩ
< 32mΩ
< 37mΩ
< 47mΩ
HBM Class 3A
MCSP 1.57x1.57_4
Top View
Bottom View
Top View
Bottom View
3
2
D
D
Pin1(G)
S
4
G
G
1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Source Current (DC) ^Note1
Source Current (Pulse) ^Note2
Power Dissipation ^Note1
V_GS
T_A=25°C I_D
I_DM
T_A=25°C P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-8
±5
-3.5
-50
0.55
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
140
190
Note 1. Mounted on minimum pad PCB
Note 2. PW <300 µs pulses, duty cycle 0.5% max
Max
170
230
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
Rev 0 : Dec. 2012
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