AOB4S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 4A a MOS Power Transistor

AOT4S60/AOB4S60/AOTF4S60
600V 4A α MOS ^TM Power Transistor
General Description
Product Summary
The AOT4S60 & AOB4S60 & AOTF4S60 have been
fabricated using the advanced αMOS^TM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT4S60L & AOB4S60L & AOTF4S60L
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
TO-220
TO-220F
Top View
TO-263
D ^D2PAK
700V
16A
0.9Ω
6nC
1.5µJ
D
DS
G
G ^DS
G
S
G
AOT4S60
AOTF4S60
AOB4S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT4S60/AOB4S60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
4
3.7
16
1.6
38
77
T_C=25°C
Power Dissipation ^B Derate above 25^oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
P_D
dv/dt
83
0.67
100
20
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Symbol AOT4S60/AOB4S60
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
65
R_θCS
0.5
Maximum Junction-to-Case
R_θJC
1.5
* Drain current limited by maximum junction temperature.
AOTF4S60
4*
3.7*
31
0.25
AOTF4S60
65
--
4
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 1: Jan 2012
www.aosmd.com
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