AOB482L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET

AOT482L/AOB482L
80V N-Channel MOSFET
SDMOS ^TM
General Description
Product Summary
The AOT482L/AOB482L is fabricated with SDMOS^TM
trench technology that combines excellent R_DS(ON) with low
gate charge and low Q_rr.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
80V
105A
< 7.2mΩ
< 9mΩ
Top View
TO220
Bottom View
D
D
Top View
TO-263
D²PAK
Bottom View
D
D
G ^DS
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
Maximum
80
±25
105
82
330
11
9
82
336
333
167
2.1
1.3
-55 to 175
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
11
47
0.36
Max
15
60
0.45
D
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Pev 0: May 2010
www.aosmd.com
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