AOB466L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AOT466L/AOB466L
60V N-Channel MOSFET
General Description
Product Summary
The AOT466L & AOB466L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R_DS(ON).This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
60V
180A
< 3.9mΩ
Top View
D
TO220
Bottom View
D
Top View
TO-263
D²PAK
Bottom View
D
D
G ^DS
SDG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.3mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
S
Maximum
60
±25
180
140
540
15
12
80
960
333
167
1.9
1.2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
54
0.35
Max
15
65
0.45
D
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Otc 2010
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