AOB430 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB430
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB430 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard product AOB430 is
Pb-free (meets ROHS & Sony 259 specifications).
AOB430L is a Green Product ordering option.
AOB430 and AOB430L are electrically identical.
Features
V_DS (V) = 60V
I_D = 12A (Vgs=10V)
R_DS(ON) < 63 mΩ (V_GS =10V)
R_DS(ON) < 85 mΩ (V_GS = 6V)
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
GD S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
12
12
30
12
23
50
25
2
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
11.2
50
13.5
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
2.5
3
Alpha Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W