AOB42S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 37A a MOS Power Transistor

AOT42S60/AOB42S60
600V 37A α MOS ^TM Power Transistor
General Description
Product Summary
The AOT42S60 & AOB42S60 have been fabricated using
the advanced αMOS^TM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT42S60L & AOB42S60L
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-263
D2PAK
700V
166A
0.109Ω
40nC
9.2µJ
D
GDS
G
S
G
AOT42S60
AOB42S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT42S60/AOB42S60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
37
23
166
11
234
1345
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
417
3.3
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
100
dv/dt
20
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT42S60/AOB42S60
65
0.5
Maximum Junction-to-Case
R_θJC
0.3
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev3: Nov 2012
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