AOB4184 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB4184
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB4184/L uses advanced trench technology
and design to provide excellent R_DS(ON) with low gate
charge. With the excellent thermal resistance of the
D²PAK package, this device is well suited for high
current load applications. AOB4184 and AOB4184L
are electrically identical.
-RoHS Compliant
-AOB4184L is Halogen Free
Top View
D
TO-263
D²PAK
Features
V_DS (V) =40V
I_D = 30 A
R_DS(ON) < 10.5 mΩ
R_DS(ON) < 13 mΩ
(V _GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
100% UIS Tested!
D
S
G
S
G
Bottom View
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain T_C=25°C
Current ^A
T_C=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=100uH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
40
±20
30
24
120
12
10
35
61
50
25
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
11
42
17
50
Maximum Junction-to-Case ^B
Steady-State
R_θJC
2.4
3
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com