AOB418 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOB418
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB418 uses advanced trench technology to
provide excellent R_DS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOB418 is Pb-free (meets ROHS
& Sony 259 specifications). AOB418L is a Green
Product ordering option. AOv and AOB418L are
electrically identical.
Features
V_DS (V) = 30V
I_D = 110A (V_GS = 10V)
R_DS(ON) < 6mΩ (V_GS = 10V)
R_DS(ON) < 7.2mΩ (V_GS = 4.5V)
TO-263
D2-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C ^G
Current ^B,G
T_A=100°C ^B
I_D
Pulsed Drain Current
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
110
68
200
40
220
100
50
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
8.1
33
12
40
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
0.84
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W