AOB416_09 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOB416
100V N-Channel MOSFET
SDMOS ^TM
General Description
Product Summary
The AOB416 is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose
applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
100V
45A
< 36mΩ
< 43mΩ
TO-263
Top View
D²PAK
Bottom View
D
D
S
G
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±25
45
32
120
6.2
5.0
28
39
150
75
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A t ≤ 10s
11
14
Maximum Junction-to-Ambient ^{A D} Steady-State ^RθJA
40
50
Maximum Junction-to-Case
Steady-State R_θJC
0.7
1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2009
www.aosmd.com
Page 1 of 7