AOB414 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AOB414
N-Channel SDMOS ^TM Power Transistor
General Description
Product Summary
The AOB414/L is fabricated with SDMOS^TM trench
technology that combines excellent R_DS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.AOB414 and AOB414L are electrically
identical.
-RoHS Compliant
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
100V
51A
< 25mΩ
< 31mΩ
Top View
D
TO-263
D²PAK
Bottom View
G
S
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
Maximum
100
±25
51
36
100
6.6
5.3
28
39
150
75
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
11
40
Maximum Junction-to-Case
Steady-State
R_θJC
0.7
Max
14
50
1
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev1: May 2012
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