AOB412L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOT412/AOB412L
100V N-Channel MOSFET
SDMOS ^TM
General Description
The AOT412 & AOB412L are fabricated with SDMOS^TM
trench technology that combines excellent R_DS(ON) with
low gate charge & low Q_rr.The result is outstanding
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 7V)
100% UIS Tested
100% R_g Tested
100V
60A
< 15.8mΩ
< 19.4mΩ
Top View
D
TO220
Bottom View
D
Top View
TO-263
D²PAK
Bottom View
D
D
G ^DS
AOT412
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS,I_AR
E_AS,E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
AOB412L
Maximum
100
±25
60
44
140
8.2
6.6
47
110
150
75
2.6
1.7
-55 to 175
G
S
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
15
40
Maximum Junction-to-Case
Steady-State
R_θJC
0.7
Max
18
48
1
D
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev2: Jul 2011
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