AOB411L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V P-Channel MOSFET

AOB411L
60V P-Channel MOSFET
General Description
The AOB411L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-4.5V)
100% UIS Tested
100% R_g Tested
-60V
-78A
< 16.5mΩ
< 22mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-60
±20
-78
-55
-230
-8
-6.5
-77
296
187
93
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
11
47
Maximum Junction-to-Case
Steady-State
R_θJC
0.6
Max
15
60
0.8
Rev 0: Mar. 2011
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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