AOB409L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V P-Channel MOSFET

AOB409L
60V P-Channel MOSFET
General Description
The AOB409L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS =-4.5V)
100% UIS Tested
100% R_g Tested
-60V
-31.5A
< 38mΩ
< 50mΩ
TO-263
Top View
D²PAK
Bottom View
D
D
D
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
Maximum
-60
±20
-31.5
-22
-85
-5
-4
37
68
83.3
41.6
2.1
1.3
-55 to 175
S
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
11
47
Maximum Junction-to-Case
Steady-State
R_θJC
1.5
Max
Units
15
°C/W
60
°C/W
1.8
°C/W
Rev 0: Sep. 2011
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