AOB403 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOB403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB403 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2-PAK package, this device is well suited for
high current load applications. Standard product
AOB403 is Pb-free (meets ROHS & Sony 259
specifications). AOB403L is a Green Product ordering
option. AOB403 and AOB403L are electrically
identical.
Features
V_DS (V) = -60V
I_D = -30A (VGS=-10V)
R_DS(ON) < 44mΩ (V_GS = -10V ) @ 30A
R_DS(ON) < 55mΩ (V_GS = -4.5V ) @ 20A
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-60
±20
-30
-20
-60
-26
134
83
42
2.2
1.45
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
10
45
12
55
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.35
1.8
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.