AOB298L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
General Description
Product Summary
The AOT298L & AOB298L & AOTF298L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of R_DS(ON) and C_rss. In addition, switching
behavior is well controlled with a soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
TO-220F
Top View
TO-263
D²PAK
D
100V
58A/33A
< 14.5mΩ
D
G
AOT298L
DS
G
AOTF298L
S
GD
S
G
AOB298L
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT298L/AOB298L
AOTF298L
Drain-Source Voltage
V_DS
100
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
58
33
41
26
130
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
9
7
Avalanche Current ^C
I_AS, I_AR
20
Avalanche energy L=0.1mH ^C
E_AS, E_AR
20
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
100
50
33
16
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.33
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT298L/AOB298L
15
60
1.5
AOTF298L
15
60
4.5
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2011
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