AOB290L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AOT290L/AOB290L
100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of R_DS(ON) and C_rss.In addition, switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
100V
140A
< 3.5mΩ
(< 3.2mΩ^∗)
Top View
D
TO220
View
Bottom
D
Top View
TO-263
D²PAK
Bottom View
D
D
G ^DS
S ^DG
S
G
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±20
140
110
500
18
15
100
500
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
50
0.25
Max
15
60
0.3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev3 : Sep 2011
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