AOB288L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET

AOT288L/AOB288L/AOTF288L
80V N-Channel MOSFET
General Description
Product Summary
The AOT288L & AOB288L & AOTF288L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of R_DS(ON),
Ciss and Coss.This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
TO-220
TO-220F
Top View
TO-263
D²PAK
D
80V
46A / 43A
< 9.2mΩ(< 8.9mΩ*)
<12.5mΩ(< 12.2mΩ*)
D
G
AOT288L
DS
G
AOTF288L
S
GD
S
G
AOB288L
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT288L/AOB288L
AOTF288L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
T_C=25°C
Power Dissipation ^B T_C=100°C
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_DSM
I_AS
E_AS
P_D
P_DSM
T_J, T_STG
80
±20
46
43
36
30
160
10.5
8
35
61
93.5
35.5
46.5
17.5
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT288L/AOB288L
15
60
1.6
AOTF288L
15
60
4.2
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2012
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