AOB284L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 80V N-Channel MOSFET

AOT284L/AOB284L
80V N-Channel MOSFET
General Description
Product Summary
The AOT284L & AOB284L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of R_DS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
80V
105A
< 4.5mΩ
< 5.7mΩ
(< 4.3mΩ^∗)
(< 5.5mΩ^∗)
Top View
TO220
Bottom View
D
D
TO-263
D²PAK
Top View
Bottom View
D
D
D
G ^DS
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
Maximum
80
±20
105
82
400
16
12.5
65
211
250
125
2.1
1.3
-55 to 175
G
G
S
S
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
48
0.45
Max
15
60
0.6
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev 0 : Oct. 2012
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