AOB27S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 27A a MOS Power Transistor

AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS ^TM Power Transistor
General Description
Product Summary
The AOT27S60& AOB27S60 & AOTF27S60 have been
fabricated using the advanced αMOS^TM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT27S60L & AOB27S60L & AOTF27S60L
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F(3kVAC;1s)
TO-263
D²PAK
D
700V
110A
0.16Ω
26nC
6µJ
D
AOT27S60
DS
G
AOTF27S60
S
GD
G
S
G
AOB27S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT27S60/AOB27S60
AOTF27S60
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
600
±30
27
27*
17
17*
110
7.5
110
480
357
50
2.9
0.4
100
20
-55 to 150
300
AOT27S60/AOB27S60
65
0.5
0.35
AOTF27S60
65
--
2.5
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 5: Sep 2012
www.aosmd.com
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