AOB270AL Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 75V N-Channel MOSFET

AOT270AL/AOB270AL
75V N-Channel MOSFET
General Description
Product Summary
The AOT270AL/AOB270AL uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of R_DS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
75V
140A
< 2.6mΩ
< 3.2mΩ
(< 2.4mΩ^∗)
(< 3.0mΩ^∗)
TO220
Top View
Bottom
D
D
Top View
TO-263
Bottom View
D
D
G ^DS
S ^DG
S
G
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
75
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
±20
140
110
560
21.5
17
120
720
500
250
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
50
0.25
Max
15
60
0.3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Dec. 2012
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