AOB266L Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
General Description
Product Summary
The AOT266L & AOB266L & AOTF266L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of R_DS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
100% UIS Tested
100% R_g Tested
TO-220
TO-220F
Top View
TO-263
D²PAK
D
60V
140A/78A
< 3.5mΩ (< 3.2mΩ^∗)
< 4.0mΩ (< 3.8mΩ^∗)
D
G
AOT266L
DS
G
AOTF266L
S
GD
S
G
AOB266L
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT266L/AOB266L
AOTF266L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
T_C=25°C
Power Dissipation ^B T_C=100°C
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_DSM
I_AS
E_AS
P_D
P_DSM
T_J, T_STG
60
±20
140
78
110
55
450
18
14
90
405
268
45.5
134
22.5
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT266L/AOB266L
15
60
0.56
AOTF266L
15
60
3.3
* Surface mount package TO263
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : May 2012
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