AOB262L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AOT262L/AOB262L
60V N-Channel MOSFET
General Description
Product Summary
The AOT262L/AOB262L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R_DS(ON).This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 6V)
100% UIS Tested
100% R_g Tested
60V
140A
< 3.0mΩ
< 3.2mΩ
(< 2.8mΩ^∗)
(< 3.0mΩ^∗)
Top View
TO220
Bottom View
D
D
TO-263
Top View
D²PAK
Bottom View
D
D
D
G ^DS
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
Maximum
60
±20
140
110
500
20
16
115
661
333
167
2.1
1.3
-55 to 175
G
G
S
S
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
48
0.35
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev0 : Nov 2010
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