AOB210L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AOT210L/AOB210L
30V N-Channel MOSFET
General Description
Product Summary
The AOT210L/AOB210L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of R_DS(ON) and C_rss.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% R_g Tested
30V
105A
< 2.9mΩ
< 3.7mΩ
(< 2.6mΩ^∗)
(< 3.5mΩ^∗)
Top View
TO220
Bottom View
D
D
TO-263
Top View
D²PAK
Bottom View
D
D
D
G ^DS
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain ^TA^=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
S
G
Maximum
30
±20
105
82
400
20
16
68
231
176
88
1.9
1.2
-55 to 175
G
G
S
S
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
12
54
Maximum Junction-to-Case
Steady-State
R_θJC
0.7
Max
15
65
0.85
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev0 : Sep 2010
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