AOB1606L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel Rugged Planar MOSFET

AOT1606L/AOB1606L
60V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1606L/AOB1606L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low R_DS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
60V
178A
< 6.3mΩ
Top View
D
TO220
Bottom View
D
Top View
TO-263
D²PAK
Bottom View
D
D
G
S
GD
G
D
S
S
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
60
±20
178
126
310
12
10
125
781
417
208
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
12
48
Maximum Junction-to-Case
Steady-State
R_θJC
0.3
Max
15
60
0.36
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: May 2011
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