AOB12N50L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V, 12A N-Channel MOSFET

AOT12N50/AOB12N50/AOTF12N50
500V, 12A N-Channel MOSFET
General Description
Product Summary
The AOT12N50 & AOB12N50 & AOTF12N50 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT12N50L & AOTF12N50L & AOB12N50L
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
TO-220
TO-220F
Top View
TO-263
D²PAK
D
600V@150℃
12A
< 0.52Ω
D
G
AOT12N50
DS
G
AOTF12N50
G ^DS
S
AOB12N50 ^G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT12N50/AOB12N50 AOTF12N50
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
12
12*
8.4
8.4*
48
5.5
454
908
40
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
250
2
50
0.4
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT12N50/AOB12N50
65
0.5
AOTF12N50
65
--
Maximum Junction-to-Case
R_θJC
0.5
2.5
* Drain current limited by maximum junction temperature.
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.8.0: April 2014
www.aosmd.com
Page 1 of 6