AOB11S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 11A a MOS Power Transistor

AOT11S60/AOB11S60/AOTF11S60
600V 11A α MOS ^TM Power Transistor
General Description
Product Summary
The AOT11S60& AOB11S60 & AOTF11S60 have been
fabricated using the advanced αMOS^TM high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11S60L & AOB11S60L & AOTF11S60L
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
100% UIS Tested
100% R_g Tested
TO-220
Top View
TO-220F(3kVAC;1s)
TO-263
D²PAK
D
700V
45A
0.399Ω
11nC
2.7µJ
D
AOT11S60
DS
G
AOTF11S60
S
D
G
G
S
G
AOB11S60
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT11S60/AOB11S60 AOTF11S60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
11
11*
8
8*
45
2
60
120
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
178
1.4
38
0.3
MOSFET dv/dt ruggedness
100
Peak diode recovery dv/dt ^H
dv/dt
20
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Symbol AOT11S60/AOB11S60 AOTF11S60
Maximum Junction-to-Ambient ^A,D
R_θJA
65
65
Maximum Case-to-sink ^A
R_θCS
0.5
--
Maximum Junction-to-Case
R_θJC
0.7
3.25
* Drain current limited by maximum junction temperature.
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 5: Sep 2012
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