AOB1100L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel Rugged Planar MOSFET

AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1100L/AOB1100L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low R_DS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested
100% R_g Tested
100V
130A
< 12mΩ
Top View
D
TO220
Bottom View
D
Top View
D
TO-263
D²PAK
Bottom View
D
S
GD
AOT1100
G
SD
S
G
AOB1100
G
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
100
±20
130
92
208
8
6
122
744
500
250
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ
12
48
0.22
Max
15
60
0.3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2011
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